光电器件模拟前端CMOS温度传感器接口

Shahrzad Ghasemi, S. Mahmoud
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引用次数: 1

摘要

本文提出了一种基于第二代电流传送带(CCII)和具有高线性和温度无关伪电阻的跨阻放大器(TIA)的CMOS温度传感器接口。由于光遗传植入式器件中的LED会产生热量,因此需要一个温度传感器来监测温度。因此,LED的反向电流可以用作其自身的传感元件。本文将利用LED反向电流作为温度敏感参数(TSP)来感知结温。传感器接口工作在±0.6 V的电源电压下。反向电流驱动能力为±1.7µA。CMOS传感器接口的总功耗为192µW。该电路提供高达2.08 MHz的工作频率。所提出的温度传感器接口的跨阻增益等于300×103 V/A。该电路采用90nm CMOS技术设计,并使用LTspice进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog Front-End CMOS Temperature Sensor Interface for Optogenetic Devices
This work presents a CMOS temperature sensor interface based on a second-generation current conveyor (CCII) and a transimpedance amplifier (TIA) with a high linear and temperature-independent pseudo-resistor. Since the LED in optogenetic implantable devices generates heat, a temperature sensor is required to monitor the temperature. Thus, the reverse current of the LED can be employed as its own sensing element. This paper will utilize the LED reverse current as a temperature-sensitive parameter (TSP) to sense the junction temperature. The sensor interface operates under a supply voltage of ±0.6 V. The reverse current driving capability is ±1.7 µA. The total power consumption of the CMOS sensor interface is 192 µW. The circuit provides an operational frequency of up to 2.08 MHz. The transimpedance gain of the proposed temperature sensor interface is equal to 300×103 V/A. The proposed circuit is designed using 90 nm CMOS technology and simulated using LTspice.
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