{"title":"单片ku波段GaAs 1瓦恒相可变功率放大器","authors":"S. Pritchett","doi":"10.1109/MCS.1989.37256","DOIUrl":null,"url":null,"abstract":"Three stages of dual-gate FETs (DGFETs) are used to achieve greater than 1-W output power with more than 14 dB associated gain under compressed RF drive while providing more than 30 dB of gain control. Minimal phase variation over the gain control range was also demonstrated. The first, second, and third stages have 800, 3200, and 6400- mu m gate peripheries, respectively. The compressed gain of this amplifier is >14 dB with >1 W output power over the 13.5- to 15.5-GHz band. The input return loss is typically >15 dB across the band.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monolithic Ku-band GaAs 1-watt constant phase variable power amplifier\",\"authors\":\"S. Pritchett\",\"doi\":\"10.1109/MCS.1989.37256\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three stages of dual-gate FETs (DGFETs) are used to achieve greater than 1-W output power with more than 14 dB associated gain under compressed RF drive while providing more than 30 dB of gain control. Minimal phase variation over the gain control range was also demonstrated. The first, second, and third stages have 800, 3200, and 6400- mu m gate peripheries, respectively. The compressed gain of this amplifier is >14 dB with >1 W output power over the 13.5- to 15.5-GHz band. The input return loss is typically >15 dB across the band.<<ETX>>\",\"PeriodicalId\":377911,\"journal\":{\"name\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1989.37256\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic Ku-band GaAs 1-watt constant phase variable power amplifier
Three stages of dual-gate FETs (DGFETs) are used to achieve greater than 1-W output power with more than 14 dB associated gain under compressed RF drive while providing more than 30 dB of gain control. Minimal phase variation over the gain control range was also demonstrated. The first, second, and third stages have 800, 3200, and 6400- mu m gate peripheries, respectively. The compressed gain of this amplifier is >14 dB with >1 W output power over the 13.5- to 15.5-GHz band. The input return loss is typically >15 dB across the band.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
