紫外激光二极管ⅱ型AlInN / ZnGeN2量子阱的增益特性

2019 IEEE Photonics Conference (IPC) Pub Date : 2019-09-01 DOI:10.1109/IPCon.2019.8908493

Hanlin Fu, J. Goodrich, N. Tansu

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摘要

通过自洽hp公式研究了不同ZnGeN2层厚度的ii型AlInN / ZnGeN2量子阱的材料增益特性。我们的研究表明，与传统结构相比，材料增益提高了约6.2倍，阈值电流和载流子密度显著降低。

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Gain Properties of Type-II AlInN / ZnGeN2 Quantum Wells for Ultraviolet Laser Diodes

The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent hp formalism. Our study shows ∼6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.

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2019 IEEE Photonics Conference (IPC)

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