IGBT栅极负偏置的研究

[Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society Pub Date : 1990-11-27 DOI:10.1109/IECON.1990.149288

A. Sandali, A. Jaafari, J. Picard

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引用次数: 1

摘要

在IGBT(绝缘栅双极晶体管)关断期间，负栅极偏置会改变开关参数。强调并分析了这种影响。与MOS晶体管不同，IGBT在负栅极偏置下的高频关断行为在氧化物-n-半导体界面处显示出强大的反转层。用一个简化模型来说明负栅极偏置对延迟时间和电流、电压切换速度的改善。负偏置可以减少关断损失25%

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Study of negative bias on the IGBT's gate

A negative gate bias during the IGBT's (insulated gate bipolar transistor's) turn off modifies the switching parameters. This effect is highlighted and analyzed. Unlike the MOS transistor, the IGBT's turn-off behavior at high frequency with negative gate bias shows a strong inversion layer at the oxide-n-semiconductor interface. A simplified model is used to show the improvements in delay time and current and voltage switching speeds brought about by the negative gate bias. The negative bias can reduce the turn-off losses by 25%.<>

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来源期刊

[Proceedings] IECON '90: 16th Annual Conference of IEEE Industrial Electronics Society

CiteScore

1.40

自引率

0.00%

发文量