OTFT电路IDDQ测试的思考

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188878

R. Picos, E. Garcia, Miquel Roca, E. Isern, Benjamin Iniguez, A. Castro-Carranza, Magali Estrada, A. Cerdeira

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引用次数: 0

摘要

本文将分析将公认的IDDQ测试技术应用于OTFT电路的可行性。具体来说，我们将分析泄漏电流、离子/断流比和信噪比对IDDQ适用性的影响。它将显示，即使IDDQ是适用的，也必须进行一些调整，以允许在背景水平上检测可能的故障。这些调整可能采取分区策略的形式，必须适应实际的技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Considerations on IDDQ test on OTFT circuits

In this paper we will analyze the feasibility of applying the well known IDDQ test technique to OTFT circuits. Specifically, we will analyze the implications of the leakage current, the Ion/Ioff ratio, and the S/N ratio on the applicability of IDDQ. It will be shown that, even if the IDDQ is applicable, some adaptation must be made, to allow detecting the possible faults over the background level. These adaptations may probably take the form of partitioning strategies, which must be adapted to the actual technology.

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来源期刊

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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