透硅介面传输线性能研究

K. Chang, Rui Li, L. Ding, Songbai Zhang
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引用次数: 7

摘要

本文研究了在通硅中间层(TSI)上制作的不同类型的传输线结构(包括微带线、共面波导、接地共面波导和差分共面波导)在40 GHz频率下的高频性能,并进行了实验表征。为了实现用于射频和/或毫米波系统集成的TSI上的低损耗、高带宽互连,讨论了设计考虑和权衡。实验结果表明,在所设计的传输线结构中,在40ghz频率范围内的插入损耗均小于0.56 dB/mm。在宽频率范围内(直到40 GHz)也实现了良好的阻抗匹配,回波损耗大于15 dB。此外,对于差分共面波导结构,在差分和共模转换之间观察到频率高达40 GHz的高隔离度超过27 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of transmission line performance on through silicon interposer
The high frequency performance of different types of transmission line structures (including microstrip line, coplanar waveguide, grounded coplanar waveguide and differential coplanar waveguide) fabricated on through silicon interposer (TSI) is studied and characterized experimentally up to 40 GHz in this paper. Design considerations and tradeoffs are discussed in order to realize low loss, high bandwidth interconnects on TSI for radio frequency and/or millimeter wave system integration. Experimental results reveal that all the designed transmission line structures have insertion loss of less than 0.56 dB/mm for frequencies up to 40 GHz. Good impedance matching over broad frequency range (till 40 GHz) is also achieved with return loss of greater than 15 dB. Additionally, for the differential coplanar waveguide structure, high isolation of more than 27 dB for frequencies up to 40 GHz is observed between the differential and common mode conversion.
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