片上光子学用金属-绝缘体-硅混合等离子体波导元件

Shiyang Zhu, G. Lo, D. Kwong
{"title":"片上光子学用金属-绝缘体-硅混合等离子体波导元件","authors":"Shiyang Zhu, G. Lo, D. Kwong","doi":"10.1109/APCAP.2012.6333181","DOIUrl":null,"url":null,"abstract":"Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.","PeriodicalId":178493,"journal":{"name":"2012 IEEE Asia-Pacific Conference on Antennas and Propagation","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Metal-insulator-Si hybrid plasmonic waveguide components for on-chip photonics\",\"authors\":\"Shiyang Zhu, G. Lo, D. Kwong\",\"doi\":\"10.1109/APCAP.2012.6333181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.\",\"PeriodicalId\":178493,\"journal\":{\"name\":\"2012 IEEE Asia-Pacific Conference on Antennas and Propagation\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Asia-Pacific Conference on Antennas and Propagation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCAP.2012.6333181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Asia-Pacific Conference on Antennas and Propagation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCAP.2012.6333181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用标准CMOS技术,在SOI平台上对垂直Cu-SiO2-Si混合等离子体元件进行了实验验证。混合等离子体波导(HPW)具有较低的传输损耗(~0.12 dB/μm),与传统硅波导的耦合效率高达~86%。半径为1.59 μm的等离子波导环形谐振腔具有消光比大(~18 dB)、带宽小(~4 nm)、自由光谱范围大(~74 nm)等特点。这些优越的性能以及完全的CMOS兼容性使它们成为用于数据通信和传感应用的硅电子光子集成电路的有希望的构建块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Metal-insulator-Si hybrid plasmonic waveguide components for on-chip photonics
Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.
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