锗光电二极管在CMOS晶圆上的高密度集成

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305946

S. Malhouitre, P. Grosse, J. Hartmann, F. Foumel, M. Wieland, T. van de Peut, C. Kopp

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引用次数: 0

摘要

本文讨论了在200毫米CMOS晶圆上制造高密度垂直锗光电二极管的方法。比较了独立器件与cmos耦合器件的光学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High density integration of Germanium photodiodes on CMOS wafer

Fabrication of high density vertical Germanium photodiodes (PDs) on top of 200 mm CMOS wafers coming from an external foundry is discussed. Optical performances of stand-alone PDs are compared lo those of CMOS-coupled PDs.

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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