N. Yazigy, J. Postel-Pellerin, V. D. Marca, R. C. Sousa, Anne-Lise Ribotta, G. D. Pendina, P. Canet
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Real-time electrical measurements during laser attack on STT-MRAM
The goal of the study is to monitor the device’s response during laser injection while being able to track pre- and post-attack conditions. We show the irradiation power affects the STT-MRAM behavior. Our electrical/optical setup enables to know the memory cell behavior to study real-time laser attack countermeasures and device reliability. We have highlighted the possibility to switch, to degrade or even to destruct the cell, depending on the laser power.
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