31.474 (44.359) %- Limiting Highest Efficiencies obtained in the \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\

In our recent works [1, 2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density JoI(II) ≡ JEn(p)o + JBp(n)o, JEn(p)o(JBp(n)o), being injected respectively into the heavily doped donor (acceptor)-GaAs emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ERLD[a(d)Si]BR, of n+(p+) − p(n) junction solar cells, respectively, (2) an effective Gaussian donor-density profile to determine JEn(p)o , and (3) the use of two experimental points, we investigated the photovoltaic conversion factor nI(II), short circuit current density JscI(II), fill factor FI(II) , and finally efficiency ηI(II) . Then, the limiting highest efficiencies, 31% (30.65%), were obtained in n+(p+) − p(n) junction solar cells at 300K. In the present work, by basing on such a treatment method, and using the physical conditions such as: W = 15 μm, NSb(In) = 1019 (1020) cm−3 and S = 100 (cm/s ) , according to the highly transparent HD[Sb(In)-GaAs]ER, and then NIn(Sb) = 1018 (1017)cm−3 for LD[In(Sb)SCIREA Journal of Physics ISSN: 2706-8862 http://www.scirea.org/journal/Physics July 26, 2022 Volume 7, Issue 4, August 2022 https://doi.org/10.54647/physics14475