High Speed, Low Power Photonic C-MOSFETs for Sub-14nm ULSI Technology

When Moore's Law finally reaches the final phase, it is essential to enhance the device performance with effective added components. This paper reports a novel optoelectronic sub-14nm CMOS transistor, fabricated with a tunnel light emitting diode (TLED) or quantum well laser (QWL) in the drain region, and an underlying avalanche breakdown photo diode (APD). The CMOS, QwL, and APD are integrated as one device. The methods described in this presentation are fully compatible with a conventional CMOS process flow, including the FINFET technology. The Ion / Ioff ratio may surpass 10nm or 7nm CMOS with these additional optic components. Data presented in this paper demonstrates sufficient light intensity and high current density from the light emitting device, in order to turn on APD with a very low supply voltage, and improve CMOS performance.