通过栅极电压观察改进插入式反导igbt的性能

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) Pub Date : 2020-09-01 DOI:10.23919/EPE20ECCEEurope43536.2020.9215764

D. Lexow, H. Eckel

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引用次数: 3

摘要

在驱动插件RC-IGBT时，通过调整关断过程可以显著提高性能结果。因此，观察特征门电压行为可以区分IGBT和二极管关断。后者可以很容易地操纵，以利用逆变器锁定时间的全部潜力。

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Performance Improvement for Plug-In Reverse Conducting IGBTs through Gate-Voltage Observation

While driving a plug-in RC-IGBT, the performance outcome can be significantly improved by adapting the turn-OFF process. Hereby, the observation of the characteristic gate-voltage behavior allows the distinction between IGBT and diode turn-OFF. Latter can be easily manipulated in order to utilize the full potential of the inverter locking time.

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来源期刊

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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