填充介质对新型单极纳米二极管蚀刻沟槽的影响

2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 1900-01-01 DOI:10.1109/MICROCOM.2016.7522531

S. Garg, A. Garg, S. Bansal, A. Chaudhary, A. Singh, S. R. Kasjoo

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引用次数: 4

摘要

本文采用基于Silvaco TCAD (Atlas)的二维计算机模拟，展示了不同介电材料对由2DEG材料(如GaN和InGaAs)制成的新型纳米电子二极管的I-V特性的影响。作为一种潜在的太赫兹探测器，进一步证明了这些材料如何影响器件在非常高频率下的寄生和导电性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of filling dielectric in etched trenches of novel unipolar nanodiode

In this paper, 2D computer simulations based on Silvaco TCAD (Atlas) have been employed to showcase the effect of different dielectric materials on the I-V characteristics of a novel nanoelectronic diode fabricated out of 2DEG materials such as GaN and InGaAs. Being a potential terahertz detector, it is further demonstrated that how these materials affect the parasitic and conductive properties of the devices at very high frequencies.

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2016 International Conference on Microelectronics, Computing and Communications (MicroCom)

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