嵌入式温度传感器射频功率放大器的在线监测

2012 IEEE 18th International On-Line Testing Symposium (IOLTS) Pub Date : 2012-06-27 DOI:10.1109/IOLTS.2012.6313850

J. Altet, D. Mateo, D. Gómez

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引用次数: 4

摘要

本文分析了硅表面的直流温度测量可以用来监测A类射频功率放大器的高频状态和性能。作为概念验证，我们展示了65 nm CMOS IC的实验结果，该IC包含一个2 GHz线性a类功率放大器和一个非常简单的差分温度传感器。结果表明，可以通过直流温度测量跟踪PA输出功率。

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On line monitoring of RF power amplifiers with embedded temperature sensors

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2 GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.

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2012 IEEE 18th International On-Line Testing Symposium (IOLTS)

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