通过理想忆阻器和非线性电阻对忆阻器件进行建模

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2023-07-03 DOI:10.1109/SMACD58065.2023.10192150

F. Corinto

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引用次数: 0

摘要

本文指出，利用理想忆阻器与非线性电阻相对应的基本代数电路元件的组合，可以得到忆阻器件(又称扩展忆阻器)的本构方程。通过适当设计本构元件的特性，这种扩展的忆阻器能够近似描述几种真实忆阻器器件的模型。为了简单起见，工作的重点是一阶忆阻器器件描述的状态依赖欧姆定律与一个单一的内部变量，但电路设计方法提出在这篇手稿可以很容易地扩展到开发忆阻器器件模型，通过识别一个线性电阻多端口连接到理想的忆阻器和非线性电阻。

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Modelling Memristive Devices via Ideal Memristor and Nonlinear Resistors

The paper shows that it is possible to exploit a combination of basic algebraic circuit elements corresponding to ideal memristors and nonlinear resistors in order to obtain the constitutive equation of a memristive device (a.k.a. extended memristor). By a suitable design of the characteristics of the constitutive elements, such extended memristors are able to approximate the model describing several real memristor devices.For the sake of simplicity, the work focuses on first–order memristor device described by the state–dependent Ohm’s law with a single internal variable, but the circuit design methodology proposed in this manuscript can be easily extended to develop memristor device models by identifying a linear resistive multiport connected to ideal memristors and nonlinear resistors.

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2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)

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