在28nm高性能64位处理器上的全数字集成单核电压调节系统的建模和实现

R. Rachala, Miguel Rodriguez, S. Kosonocky, Milos Trajkovic
{"title":"在28nm高性能64位处理器上的全数字集成单核电压调节系统的建模和实现","authors":"R. Rachala, Miguel Rodriguez, S. Kosonocky, Milos Trajkovic","doi":"10.1145/2934583.2934586","DOIUrl":null,"url":null,"abstract":"This paper describes modeling and implementation of a fully digital integrated linear voltage regulation system implemented in a 28nm x86-64 core to reduce power gating entry or exit latency. Running on a 100 MHz clock, the controller samples voltage using a time-to-digital converter, and controls a set of PFETs organized in a ring topology around the CPU cores to drop voltage down to a specified target value. A simple analytical model is developed and validated through fast Matlab-Simulink simulation, enabling quick design turnaround and reducing schedule impact. The regulation system is designed to support input-output voltages in the range 1.3 V - 0.55 V. Digitally-controlled header resistance values range from 1.5 Ω to 2 mΩ. Stable processor behavior is observed down to 0.6 V, enabling fast pseudo-power gating entry and exit. In a high-performance x86-64 dual-core microprocessor chip, the controller enables an effective 6% frequency increase for lightly threaded applications by increasing the boost state residency.","PeriodicalId":142716,"journal":{"name":"Proceedings of the 2016 International Symposium on Low Power Electronics and Design","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling and implementation of a fully-digital integrated per-core voltage regulation system in a 28nm high performance 64-bit processor\",\"authors\":\"R. Rachala, Miguel Rodriguez, S. Kosonocky, Milos Trajkovic\",\"doi\":\"10.1145/2934583.2934586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes modeling and implementation of a fully digital integrated linear voltage regulation system implemented in a 28nm x86-64 core to reduce power gating entry or exit latency. Running on a 100 MHz clock, the controller samples voltage using a time-to-digital converter, and controls a set of PFETs organized in a ring topology around the CPU cores to drop voltage down to a specified target value. A simple analytical model is developed and validated through fast Matlab-Simulink simulation, enabling quick design turnaround and reducing schedule impact. The regulation system is designed to support input-output voltages in the range 1.3 V - 0.55 V. Digitally-controlled header resistance values range from 1.5 Ω to 2 mΩ. Stable processor behavior is observed down to 0.6 V, enabling fast pseudo-power gating entry and exit. In a high-performance x86-64 dual-core microprocessor chip, the controller enables an effective 6% frequency increase for lightly threaded applications by increasing the boost state residency.\",\"PeriodicalId\":142716,\"journal\":{\"name\":\"Proceedings of the 2016 International Symposium on Low Power Electronics and Design\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2016 International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2934583.2934586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2016 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2934583.2934586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文描述了在28nm x86-64内核中实现的全数字集成线性电压调节系统的建模和实现,以减少功率门控进入或退出延迟。在100mhz时钟上运行,控制器使用时间-数字转换器对电压进行采样,并控制一组围绕CPU内核以环形拓扑结构组织的pfet,以将电压降至指定的目标值。通过快速Matlab-Simulink仿真,开发并验证了一个简单的分析模型,从而实现快速设计周转并减少进度影响。调节系统的设计支持输入输出电压范围在1.3 V - 0.55 V。数字控制头电阻值范围从1.5 Ω到2 mΩ。稳定的处理器行为被观察到低至0.6 V,使快速伪功率门控进入和退出。在高性能x86-64双核微处理器芯片中,该控制器通过增加升压状态驻留,使轻线程应用的频率有效提高6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and implementation of a fully-digital integrated per-core voltage regulation system in a 28nm high performance 64-bit processor
This paper describes modeling and implementation of a fully digital integrated linear voltage regulation system implemented in a 28nm x86-64 core to reduce power gating entry or exit latency. Running on a 100 MHz clock, the controller samples voltage using a time-to-digital converter, and controls a set of PFETs organized in a ring topology around the CPU cores to drop voltage down to a specified target value. A simple analytical model is developed and validated through fast Matlab-Simulink simulation, enabling quick design turnaround and reducing schedule impact. The regulation system is designed to support input-output voltages in the range 1.3 V - 0.55 V. Digitally-controlled header resistance values range from 1.5 Ω to 2 mΩ. Stable processor behavior is observed down to 0.6 V, enabling fast pseudo-power gating entry and exit. In a high-performance x86-64 dual-core microprocessor chip, the controller enables an effective 6% frequency increase for lightly threaded applications by increasing the boost state residency.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信