脉冲激光沉积类金刚石薄膜的电子发射特性

F. Chuang, C.Y. Sun, H.F. Cheng, W. Wang, C.M. Huang, I. Lin
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引用次数: 0

摘要

采用脉冲激光沉积技术制备了具有较大电子发射能力的类金刚石(DLC)薄膜。AFM形貌和拉曼光谱推断SP/sup 3/-键的比例是改变场发射特性的主要因素。因此,需要大的激光通量和中等高的衬底温度。248nn (KrF)激光束和193nn (ArF)激光束沉积大发射电流密度DLC膜所需的临界激光能量分别为10 J/cm/sup 2/和4 J/cm/sup 2/。在400/spl度/C条件下,使用248 nm激光束生长的DLC薄膜的最高发射电流密度为80 /spl mu/LA/cm/sup 2/;在200/spl度/C条件下,使用193 nm激光束生长的DLC薄膜的最高发射电流密度为160 /spl mu/A/cm/sup 2/。开启电场分别为11.6 MV/m和11.4 MV/m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron emission characteristics of pulsed laser deposited diamond-like films
Diamond like carbon (DLC) films possessing large electron emission capacity were obtained by pulsed laser deposition process. AFM morphologies and Raman spectra inferred that the proportion of SP/sup 3/-bonds is the predominating factor modifying the field emission characteristics. Large laser fluence and moderately high substrate temperature are thus required. The critical laser fluence needed to deposit DLC films with large emission current density was 10 J/cm/sup 2/ for 248 nn (KrF) laser beams and 4 J/cm/sup 2/ for 193 nn (ArF) laser beams, respectively. The highest emission current density was 80 /spl mu/LA/cm/sup 2/ for DLC films deposited at 400/spl deg/C using 248 nn laser beams and was 160 /spl mu/A/cm/sup 2/ for those grown at 200/spl deg/C using 193 nm laser beams. The turn on electric field was, respectively, 11.6 MV/m and 11.4 MV/m.
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