Photovoltage transients in GaAs/InGaAs solar cells (Presentation Recording)

A study of the photovoltaic properties of the GaAs-based solar cells with InGaAs quantum wire had been conducted. The research included the investigation of the photovoltage rise and decay transients, spectral photovoltage dependences at different temperatures. The objects investigated were GaAs-based solar cells with InGaAs quantum wire (QWR) embedded into space-charge-region of p-i-n junction. Samples with different In content and size of InGaAs nanoobjects had been created using molecular beam epitaxy. Unlike the reference cell, the ones containing the InGaAs QWR had shown higher sensitivity in the energy range 1.2 - 1.38 eV. This is caused by the spatial separation of electron-hole (e-h) pairs excited in the QWR due to band-to-band transition. Under selective excitation of the e-h pairs only in the InGaAs quantum wire the photovoltage rise transient is slower compared to the e-h generation in GaAs. This effect is explained by charge carriers release from the InGaAs quantum well into delocalized states of the surrounding GaAs. It was determined that the InGaAs quantum wires increase the recombination rate of the non-equilibrium carriers in the temperature range 80 to 290 K, which means that the quantum wires are the additional recombination centers.