基于砷化镓的阻塞杂质带探测器的响应特性

2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2017-11-01 DOI:10.1109/ICAM.2017.8242162

Yulu Chen, B. Wang, Chuansheng Zhang, Liwei Hou, M. Pan, Xiaodong Wang

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引用次数: 0

摘要

基于gaas的阻塞杂质带探测器(BIB)作为一种潜在的高灵敏度、低噪声的太赫兹探测器，在太赫兹安全检查和天文任务领域得到了广泛的应用。在本工作中，制备了GaAs:Si和GaAs:Te BIB探测器。在T=3.5K、不同偏置和相同黑体温度1000K下测量了它们的响应特性。实验结果表明，GaAs:Si BIB器件的响应率高达66 mA/W (Vbias=1V)，是GaAs:Te BIB器件的5倍左右。这项工作证明了Si是GaAs基BIB探测器吸收层的合适掺杂元素选择。

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Responsivity properties of GaAs based Blocked-Impurity-Band detectors

GaAs-based Blocked-Impurity-Band (BIB) detector, as a potential high-sensitive, low noise Terahertz (THz) detector, has been developed for the broad application in the area of THz security check and astronomy mission. In this work, GaAs:Si and GaAs:Te BIB detectors were fabricated. Their responsivity properties were measured at T=3.5K, under different biases and the same black body temperature of 1000K. The experimental results reveal that the GaAs:Si BIB device has a higher responsivity of 66 mA/W (Vbias=1V), about 5 times higher than that of GaAs:Te BIB device. This work demonstrates Si as a suitable choice of doping element for the absorption layer of GaAs based BIB detectors.

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2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)

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