一种用劈裂边过生长制备的新型谐振隧道晶体管

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303095

Ç. Kurdak, D. Tsui, S. Parihar, H. Manoharan, S. Lyon, M. Shayegan

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引用次数: 0

摘要

在GaAs/AlGaAs体系中，利用分子束外延裂边过生长技术实现了一种新型三端谐振隧道晶体管。除了负差分电阻外，该器件还具有正、负跨导特性，可以在高速逻辑电路中找到有用的应用。

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A new resonant tunneling transistor fabricated by cleaved edge overgrowth

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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