基于真单相时钟逻辑的多值逻辑电压型存储电路

I. Thoidis, D. Soudris, I. Karafyllidis, A. Thanailakis, T. Stouraitis
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引用次数: 1

摘要

介绍了几种新型电压型多值逻辑电路。利用真单相时钟逻辑的主要特点,提出了高效的四元逻辑动态和伪静态锁存器、动态和静态主从存储单元以及单信号控制通闸。这些电路使用两种MOS晶体管,即增强模式和耗尽模式,每种晶体管都有两个阈值电压。所提出的电路具有规则、模块化和迭代结构,这意味着MVL电路是VLSI可实现的,并且可以很容易地为任何算术系统的基数重新设计。由于我们只使用时钟信号,因此衍生电路具有低功耗。与现有电路的比较证明在速度、功耗和晶体管数量方面有了实质性的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple-valued logic voltage-mode storage circuits based on true-single-phase clocked logic
A number of novel voltage-mode multiple-valued logic circuits are introduced. Adopting the main features of the true single-phase clocked logic, efficient quaternary logic dynamic and pseudo-static latches, dynamic and static master-slave storage units, and uni-signal controlled pass gates are proposed. These circuits use two kinds of MOS transistors, i.e., enhancement and depletion mode, each of which has two threshold voltages. The proposed circuits exhibit regular, modular, and iterative structure, which means that the MVL circuits are VLSI implementable and can be easily re-designed for any radix of an arithmetic system. Since we use only clock signal, the derived circuits have low power dissipation. Comparisons with existing circuits prove substantial improvements in terms of speed, power consumption, and transistor count.
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