一种用于无线传感器亚阈值LDO的新型反折叠限流保护

Ziyue Chen, Yihui Shi, Ao Hu, Jiarui Xu, Guoyi Yu, Chao Wang
{"title":"一种用于无线传感器亚阈值LDO的新型反折叠限流保护","authors":"Ziyue Chen, Yihui Shi, Ao Hu, Jiarui Xu, Guoyi Yu, Chao Wang","doi":"10.1109/ICTA56932.2022.9962996","DOIUrl":null,"url":null,"abstract":"This paper presents a novel fold-back current limiting protection circuit used in sub-threshold low dropout regulator (LDO) for wireless sensor applications. By sensing the output current and output voltage, then comparing the sampled results with VREF, the proposed protection circuit can control the gate voltage of the power transistor to limit the output current. The maximum output current and short current of the sub-threshold LDO can be limited to 330 mA and 90 mA, respectively, which can save up to 71.9% of power consumption in the case of an output short-circuit condition compared with traditional constant current limiting protection methods. In a 0.35-μm CMOS technology, the sub-threshold LDO can provide a 3.3 V output voltage stably under the 5 V input voltage when the load current changes from 1 μA to 200 mA, and the load regulation rate is only 0.019 mV/mA.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel Fold-Back Current Limiting Protection used in Sub-threshold LDO for Wireless Sensor Applications\",\"authors\":\"Ziyue Chen, Yihui Shi, Ao Hu, Jiarui Xu, Guoyi Yu, Chao Wang\",\"doi\":\"10.1109/ICTA56932.2022.9962996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel fold-back current limiting protection circuit used in sub-threshold low dropout regulator (LDO) for wireless sensor applications. By sensing the output current and output voltage, then comparing the sampled results with VREF, the proposed protection circuit can control the gate voltage of the power transistor to limit the output current. The maximum output current and short current of the sub-threshold LDO can be limited to 330 mA and 90 mA, respectively, which can save up to 71.9% of power consumption in the case of an output short-circuit condition compared with traditional constant current limiting protection methods. In a 0.35-μm CMOS technology, the sub-threshold LDO can provide a 3.3 V output voltage stably under the 5 V input voltage when the load current changes from 1 μA to 200 mA, and the load regulation rate is only 0.019 mV/mA.\",\"PeriodicalId\":325602,\"journal\":{\"name\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTA56932.2022.9962996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9962996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种用于无线传感器亚阈值低压稳压器(LDO)的新型反折叠限流保护电路。该保护电路通过检测输出电流和输出电压,并将采样结果与VREF进行比较,控制功率晶体管的栅极电压,从而限制输出电流。亚阈值LDO的最大输出电流和短电流分别可限制为330 mA和90 mA,与传统恒流限流保护方法相比,在输出短路情况下可节省高达71.9%的功耗。在0.35 μm CMOS工艺中,当负载电流从1 μA变化到200 mA时,亚阈值LDO可以在5 V输入电压下稳定提供3.3 V输出电压,负载调节速率仅为0.019 mV/mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Fold-Back Current Limiting Protection used in Sub-threshold LDO for Wireless Sensor Applications
This paper presents a novel fold-back current limiting protection circuit used in sub-threshold low dropout regulator (LDO) for wireless sensor applications. By sensing the output current and output voltage, then comparing the sampled results with VREF, the proposed protection circuit can control the gate voltage of the power transistor to limit the output current. The maximum output current and short current of the sub-threshold LDO can be limited to 330 mA and 90 mA, respectively, which can save up to 71.9% of power consumption in the case of an output short-circuit condition compared with traditional constant current limiting protection methods. In a 0.35-μm CMOS technology, the sub-threshold LDO can provide a 3.3 V output voltage stably under the 5 V input voltage when the load current changes from 1 μA to 200 mA, and the load regulation rate is only 0.019 mV/mA.
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