辐射硬化非易失性相变存储技术的表征与鉴定

J. Rodgers, L. Rockett, J. Maimon, T. Storey, P. Nixon
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引用次数: 8

摘要

BAE系统公司开发了一种4Mb非易失性硫族随机存取存储器(C-RAM),针对航天器应用中遇到的辐射环境进行了优化。C-RAM是一种相变存储器,具有独特的功能组合,可提供高密度、低功耗、非易失性的存储解决方案,该解决方案具有抗辐射能力,并满足严格的可靠性要求。该设备已完成QML-Q认证测试,现已全面投产。飞行合格的C-RAM将满足战略空间和军事应用中对rad硬非易失性RAM的迫切需求。本文介绍了4Mb C-RAM产品,并介绍了C-RAM QML-Q合格测试的结果,包括在所有辐射环境下的测试结果的详细分析。1 2
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and qualification of radiation hardened nonvolatile phase change memory technology
BAE Systems has developed a 4Mb Non-Volatile Chalcogenide Random Access Memory (C-RAM) optimized for the radiation environments encountered in spacecraft applications. C-RAM is a phase change memory with a unique combination of features that collectively provide a high-density, low-power, non-volatile memory solution that is radiation hardened and meets rigorous reliability requirements. The device has completed QML-Q qualification testing and is now in full production. Flight qualified C-RAM will serve the critical need for rad hard nonvolatile RAM in strategic space and military applications. This paper describes the 4Mb C-RAM product and presents the results of C-RAM QML-Q qualification testing including detailed analyses of the test results in all the radiation environments. 1 2
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