CMOS Reconfigurable Dual-Band Low Noise Amplifier for eMTC Receiver

This paper presents a low power dual-band low noise amplifier (LNA) targeting for GSM and LTE standard, designed for eMTC receiver. Selections of parallel cascade amplifiers, switching input inductors and loads are used for reconfigurable wireless bands and gain control in this LNA operating at 0.9/1.9 GHz. Simultaneously, switching source inductors are used because of the different input impedance of dual bands far apart. The maximum power gain is from 18.4 to 19.2 dB between dual bands with controlled range of over 12dB. The noise Figure (NF) is 1.57/1.68 dB at 0.9/1.9 GHz bands, respectively. This LNA achieves the IIP3 of -5.9/-4.3 dBm while consuming an average power of 7mW (without buffer) with the highest gain at two different frequencies. The proposed reconfigurable LNA is designed in 65nm CMOS process from 1.2V supply.