采用180nm SOI CMOS集成磁增强电感，实现了2.22-2.92GHz LC-VCO

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2016-05-22 DOI:10.1109/RFIC.2016.7508263

R. Ma, Fei Lu, Qi Chen, Chenkun Wang, Feng Liu, Wanghui Zou, Albert Z. H. Wang

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引用次数: 7

摘要

我们在180nm的SOI CMOS上设计了一个2.22-2.92GHz的LC压控振荡器(LC- vco)，并集成了一个新型的紧凑型垂直磁芯电感器。采用一种新的cmos兼容工艺制备了新型磁增强电感器。测量结果表明，在工作频率范围内，单层磁芯电感器的电感密度提高了16.9%，在10MHz偏移频率下，压控振荡器的相位噪声从-106.97dBc/Hz降至-113.49dBc/Hz。该VCO原型展示了使用新型垂直磁芯电感器设计射频片上系统(SoC)的潜力。

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A 2.22–2.92GHz LC-VCO demonstrated with an integrated magnetic-enhanced inductor in 180nm SOI CMOS

We demonstrate a 2.22-2.92GHz LC voltage-controlled oscillator (LC-VCO) in an 180nm SOI CMOS integrated with a novel compact inductor with vertical magnetic core. The new magnetic-enhanced inductor was fabricated using a new CMOS-compatible process. Measurements show that the single-layer magnetic-cored inductor increases its inductor density by 16.9% within the operation frequency range, leading to a phase noise reduction for the VCO from -106.97dBc/Hz to -113.49dBc/Hz at 10MHz offset frequency. This VCO prototype demonstrates the potential of designing RF system-on-a-chip (SoC) using new vertical magnetic-cored inductors.

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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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