SiGe HBT线性特性的结构依赖性

Guoxuan Qin, N. Jiang, Guogong Wang, Z. Ma
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引用次数: 8

摘要

本文比较了不同频率、不同偏置条件和不同输入/输出匹配条件下共射极(CE)和共基(CB) SiGe HBTs的线性特性。结果表明,在不进行输入输出阻抗匹配的情况下,在相同输入功率水平下,CB配置比CE配置具有更好的线性度,且两种配置的IMD3差值随工作频率的增加而减小。然而,当器件的输入和输出都是阻抗匹配以获得最大输出功率时,CE配置比CB配置具有更好的线性度。此外,在不改变输入/输出匹配的情况下,两种配置的线性度随偏置的变化方式不同,CE配置的线性度降低,而CB配置的线性度随着偏置的增加而提高。在一定的阻抗和偏置条件下,与CE配置相比,CB配置可以提供更好的线性度和更高的功率增益
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Configuration Dependence of SiGe HBT Linearity Characteristics
Linearity characteristics between common-emitter (CE) and common-base (CB) SiGe HBTs are compared at different frequencies, under different bias conditions and at different input/output matching conditions in this paper. It is shown that, without impedance matching at input/output of the devices, the CB configuration exhibits better linearity than the CE configuration under the same input power level and the difference of IMD3 between the two configurations decreases with the increase of operation frequency. However, when both input and output of the devices are impedance-matched for maximum output power Pout , the CE configuration has better linearity than the CB configuration. Furthermore, without varying the input/output matching, the linearity of the two configurations varies with bias in different ways that the linearity of the CE configuration degrades and that of the CB configuration improves as the bias is increased. Under certain impedance and bias conditions, the CB configuration can provide better linearity, besides higher power gain, than the CE configuration
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