C. Jan, N. Anand, C. Allen, J. Bielefeld, M. Buehler, V. Chikamane, K. Fischer, K. Jain, J. Jeong, S. Klopcic, T. Marieb, B. Miner, P. Nguyen, A. Schmitz, M. Nashner, T. Scherban, B. Schroeder, C. Ward, R. Wu, K. Zawadzki, S. Thompson, M. Bohr
{"title":"90nm高容量制造逻辑技术,在300mm晶圆上实现铜金属化和CDO低k ILD互连","authors":"C. Jan, N. Anand, C. Allen, J. Bielefeld, M. Buehler, V. Chikamane, K. Fischer, K. Jain, J. Jeong, S. Klopcic, T. Marieb, B. Miner, P. Nguyen, A. Schmitz, M. Nashner, T. Scherban, B. Schroeder, C. Ward, R. Wu, K. Zawadzki, S. Thompson, M. Bohr","doi":"10.1109/IITC.2004.1345747","DOIUrl":null,"url":null,"abstract":"A leading edge 90 nm, 300 mm wafer size interconnect technology featuring Cu, CDO low-k ILD and industry's most aggressive 220 nm minimum metal pitch is being ramped into production for high performance Pentium/spl reg/ microprocessors, the first in industry, to our knowledge. Key enabling features for yield and reliability improvement to resolve challenges from weak thermo-mechanical properties of low k ILD and tight metal pitches for a production worthy interconnect process are presented.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers\",\"authors\":\"C. Jan, N. Anand, C. Allen, J. Bielefeld, M. Buehler, V. Chikamane, K. Fischer, K. Jain, J. Jeong, S. Klopcic, T. Marieb, B. Miner, P. Nguyen, A. Schmitz, M. Nashner, T. Scherban, B. Schroeder, C. Ward, R. Wu, K. Zawadzki, S. Thompson, M. Bohr\",\"doi\":\"10.1109/IITC.2004.1345747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A leading edge 90 nm, 300 mm wafer size interconnect technology featuring Cu, CDO low-k ILD and industry's most aggressive 220 nm minimum metal pitch is being ramped into production for high performance Pentium/spl reg/ microprocessors, the first in industry, to our knowledge. Key enabling features for yield and reliability improvement to resolve challenges from weak thermo-mechanical properties of low k ILD and tight metal pitches for a production worthy interconnect process are presented.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 90nm high volume manufacturing logic technology featuring Cu metallization and CDO low-k ILD interconnects on 300 mm wafers
A leading edge 90 nm, 300 mm wafer size interconnect technology featuring Cu, CDO low-k ILD and industry's most aggressive 220 nm minimum metal pitch is being ramped into production for high performance Pentium/spl reg/ microprocessors, the first in industry, to our knowledge. Key enabling features for yield and reliability improvement to resolve challenges from weak thermo-mechanical properties of low k ILD and tight metal pitches for a production worthy interconnect process are presented.