{"title":"20kW直流直流变换器SiC mosfet的优化设计","authors":"Weicheng Zhou, Shu Yang, Xinke Wu, Kuang Sheng","doi":"10.23919/ISPSD.2017.7988969","DOIUrl":null,"url":null,"abstract":"SWicoii Carbide (SiC) MOSFET, enabling high frequency, high temperature and high power density, are attractive for power electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is a necessary approach to increase the capacity of the power module. In this work, targeted at 20kW DC/DC converter for HEV application, we have designed and fabricated 1200V/100A SiC MOSFETs modules using different numbers of 1200V/80mΩ SiC MOSFET chips. The influence of chip number on switching loss and efficiency of the power modules have been analyzed for module optimization. Furthermore, the operating frequency and efficiency of the power module basing on SiC MOSFET and Si IGBT are compared and investigated.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimal design of SiC MOSFETs for 20kW DCDC converter\",\"authors\":\"Weicheng Zhou, Shu Yang, Xinke Wu, Kuang Sheng\",\"doi\":\"10.23919/ISPSD.2017.7988969\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SWicoii Carbide (SiC) MOSFET, enabling high frequency, high temperature and high power density, are attractive for power electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is a necessary approach to increase the capacity of the power module. In this work, targeted at 20kW DC/DC converter for HEV application, we have designed and fabricated 1200V/100A SiC MOSFETs modules using different numbers of 1200V/80mΩ SiC MOSFET chips. The influence of chip number on switching loss and efficiency of the power modules have been analyzed for module optimization. Furthermore, the operating frequency and efficiency of the power module basing on SiC MOSFET and Si IGBT are compared and investigated.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988969\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988969","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
SWicoii碳化物(SiC) MOSFET具有高频、高温和高功率密度的特性，在电力电子应用中具有很大的吸引力。然而，由于单个芯片的面积有限，并联SiC mosfet是增加功率模块容量的必要方法。在这项工作中，我们针对HEV应用的20kW DC/DC转换器，使用不同数量的1200V/80mΩ SiC MOSFET芯片设计和制造了1200V/100A SiC MOSFET模块。分析了芯片数量对功率模块开关损耗和效率的影响，对模块进行了优化。并对基于SiC MOSFET和基于Si IGBT的功率模块的工作频率和效率进行了比较和研究。
Optimal design of SiC MOSFETs for 20kW DCDC converter
SWicoii Carbide (SiC) MOSFET, enabling high frequency, high temperature and high power density, are attractive for power electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is a necessary approach to increase the capacity of the power module. In this work, targeted at 20kW DC/DC converter for HEV application, we have designed and fabricated 1200V/100A SiC MOSFETs modules using different numbers of 1200V/80mΩ SiC MOSFET chips. The influence of chip number on switching loss and efficiency of the power modules have been analyzed for module optimization. Furthermore, the operating frequency and efficiency of the power module basing on SiC MOSFET and Si IGBT are compared and investigated.
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