动态俘获对高频有机场效应晶体管的影响

2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Pub Date : 2020-06-01 DOI:10.23919/MIXDES49814.2020.9155644

Markus Mueller, Shabnam Donnhäuser, S. Mothes, A. Pacheco-Sánchez, K. Haase, S. Mannsfeld, M. Claus

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引用次数: 0

摘要

许多新兴的有机半导体器件都存在由陷阱引起的迟滞效应。这些陷阱对交流器件性能的影响尚未被研究。本文在理论框架、TCAD仿真和实验数据的基础上，研究了与动态俘获相关的高频非准静态效应。与以往的研究不同，本文的重点是OFET的高频性能，而不是陷阱的表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Dynamic Trapping on High Frequency Organic Field-Effect Transistors

Many emerging organic semiconductor devices suffer from hysteresis effects caused by traps. The impact of such traps on AC device performance has not been investigated yet. In this paper, high-frequency non-quasi-static effects related to dynamic trapping based on a theoretical framework, TCAD simulations and experimental data have been studied. In contrast to previous studies, the focus of this paper is the OFET's high-frequency performance and not the characterization of the traps.

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2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

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