一种新型的基于二阶高阻抗表面共振的太赫兹增强偶极子天线用于MM成像和传感

G. Mikhail, Y. Quéré, C. Quendo, C. Person
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引用次数: 3

摘要

本文提出了一种利用高阻抗表面(HIS)在低阻硅衬底上提高太赫兹(THz)和毫米波(MMW)片上天线性能的改进技术。这些表面直接印刷到意法半导体BiCMOS 55nm技术后端线(BEOL)的金属层上,不需要任何特殊的后处理(微加工,通过硅孔(TSV)等)。它们在增益和效率方面提供了显著的改进。例如,60 GHz的集成偶极子天线的增益提高了7 dBi,效率提高了40%,而没有HIS的基本偶极子天线的效率为23%。此外,由于硅衬底的固定高度引起的频率限制,利用HIS的高阶共振来提高其在更高频率下的性能。在毫米波成像应用中,利用220 ghz天线利用HIS的二阶共振。因此,增益提升了15 dBi数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel THz-enhanced dipole antenna using second-order high impedance surface resonance for MM imaging and sensing
In this paper, an improved technique is presented to enhance Terahertz (THz) and Millimeter Wave (MMW) On-Chip antenna performance on low-resistive silicon substrates using High-Impedance Surfaces (HIS). These surfaces are directly printed onto the metal layers of ST Microelectronics' BiCMOS 55 nm technology Back End Of Line (BEOL) and do not require any special post-process (micromachining, Through Silicon Vias (TSV), etc.). They provide a remarkable improvement in terms of gain and efficiency. For example, the gain of an integrated dipole antenna at 60 GHz is improved by 7 dBi, and 40% efficiency is obtained, against 23% for the basic dipole without HIS. Furthermore, due to the frequency limitations induced by the fixed height of the silicon substrate, higher-order resonances of HIS are exploited to enhance performance at higher frequencies. The second-order resonance of an HIS is exploited with a 220-GHz antenna for millimeter-wave imaging applications. Thus, the gain is upgraded by the order of 15 dBi.
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