{"title":"基于gan的MQW调制后向反射器技术,工作在可见光和紫外光谱范围内","authors":"C. Rivera, J. Cabrero, P. Munuera, F. Aragón","doi":"10.1109/ICSOS.2011.5783676","DOIUrl":null,"url":null,"abstract":"Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.","PeriodicalId":107082,"journal":{"name":"2011 International Conference on Space Optical Systems and Applications (ICSOS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaN-based technology for MQW modulating retro-reflectors operating in the visible and ultraviolet spectral ranges\",\"authors\":\"C. Rivera, J. Cabrero, P. Munuera, F. Aragón\",\"doi\":\"10.1109/ICSOS.2011.5783676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.\",\"PeriodicalId\":107082,\"journal\":{\"name\":\"2011 International Conference on Space Optical Systems and Applications (ICSOS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Space Optical Systems and Applications (ICSOS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSOS.2011.5783676\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Space Optical Systems and Applications (ICSOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSOS.2011.5783676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN-based technology for MQW modulating retro-reflectors operating in the visible and ultraviolet spectral ranges
Calculations based on the k·p perturbation approach have been used to study the properties of GaN-based electroabsorption modulators. The results indicate that optical transitions are dominated by the effect of piezoelectrically-induced electric fields. The measured extinction ratio of non-optimized devices is higher than 3 and 2.5 for modulators operating around 475 nm and 400 nm, respectively. In addition to applied voltage, carrier-induced screening seems an efficient method to drive the modulation.