一种新的射频硅mosfet BSIM3v3模型参数提取方法

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766223

Seonghearn Lee, Hyun-Kyu Yu

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引用次数: 8

摘要

针对SPICE BSIM3v3型射频MOSFET，提出了一种利用GHz波段s参数数据提取参数的新方法。电容参数的提取是使用在不同器件尺寸的特定偏置条件下测量的s参数集进行的。通过z参数方程的频率响应拟合得到电阻(R/sub g/， R/sub d/)和电感，并通过s参数优化确定源电阻和衬底电阻。在12 GHz范围内，观测到的s参数与模型s参数具有良好的对应关系。

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A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs

A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out using S-parameter sets measured under specific bias conditions for various device sizes. The resistances (R/sub g/, R/sub d/) and inductances are obtained by fitting the frequency responses of Z-parameter equations, and source and substrate resistances are determined using S-parameter optimization. Good correspondence is observed between measured and modeled S-parameters up to 12 GHz.

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来源期刊

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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