利用倾斜和旋转缓冲氮注入(BNITR)改善0.2 um及以上DRAM电池尾部组件的保留时间分布

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852780

I. Kim, N. Kim, H. Jung, H. Kwon, Seung-Han Ok, Jongmin Kim, P. Sim, Joosung Park, Dae-Young Park, S. Jang

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引用次数: 0

摘要

研究了一种基于0.2 um设计规则和STI(浅沟槽隔离)的新型DRAM存储单元结制方案，以改善DRAM存储单元尾分量的保持时间分布。本文提出了基于尾部局部场增强模型设计的BNITR (Buffered N-Implantation with Tilt and Rotation)工艺方案，并报告了在不发生器件退化的情况下，对尾部保持时间分布的良好改善效果。

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Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

The novel junction process scheme in DRAM memory cell with 0.2 um design rule and STI (Shallow Trench Isolation) has been investigated to improve the tail component of DRAM retention time distribution. In this paper, we propose BNITR (Buffered N-Implantation with Tilt and Rotation) process scheme that is designed on the basis of the local field-enhancement model of the tail component and report an excellent improvement effect in tail distribution of retention time without device degradation.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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