硅上铕掺杂GaN的温度依赖性可见光发光特性

Conference on Lasers and Electro-Optics, 2003. CLEO '03. Pub Date : 2003-06-01 DOI:10.1364/FIO.2003.WFF4

Chang-won Lee, H. Everitt, J.M. Javada, A. Stecki

{"title":"硅上铕掺杂GaN的温度依赖性可见光发光特性","authors":"Chang-won Lee, H. Everitt, J.M. Javada, A. Stecki","doi":"10.1364/FIO.2003.WFF4","DOIUrl":null,"url":null,"abstract":"A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.","PeriodicalId":432096,"journal":{"name":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Temperature dependent visible photolumineseence of Eu-doped GaN on Silicon\",\"authors\":\"Chang-won Lee, H. Everitt, J.M. Javada, A. Stecki\",\"doi\":\"10.1364/FIO.2003.WFF4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.\",\"PeriodicalId\":432096,\"journal\":{\"name\":\"Conference on Lasers and Electro-Optics, 2003. CLEO '03.\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Lasers and Electro-Optics, 2003. CLEO '03.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/FIO.2003.WFF4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/FIO.2003.WFF4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用固态分子束外延的方法研究了在硅上生长的掺铕氮化镓的光谱。连续波和时间分辨发光特性的温度依赖性揭示了能量传递速率和热活化能的细节。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Temperature dependent visible photolumineseence of Eu-doped GaN on Silicon

A spectroscopic study of Eu-doped GaN grown on silicon by solid state molecular beam epitaxy is presented. The temperature dependence of the continuous-wave and time-resolved luminescence properties reveals details about the energy transfer rates and thermal activation energies.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference on Lasers and Electro-Optics, 2003. CLEO '03.

自引率

0.00%

发文量