C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel
{"title":"空间共振纳米空腔量子点阵列","authors":"C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel","doi":"10.1109/INOW.2008.4634484","DOIUrl":null,"url":null,"abstract":"We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatially resonant nanocavity-quantum dot arrays\",\"authors\":\"C. Schneider, T. Sunner, M. Strauss, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, S. Hofling, A. Forchel\",\"doi\":\"10.1109/INOW.2008.4634484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report on a scalable process to incorporate InAs quantum dots in spatially resonant devices. This process combines site controlled quantum dot growth with an accurate alignment of the device to the single QDs.
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