用大信号码TESLA-Z对真空电子器件的稳定性建模

I. Chernyavskiy, T. Antonsen, A. Vlasov, J. Rodgers, B. Levush
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引用次数: 0

摘要

本文提出了一种利用大信号码TESLA-Z研究真空电子器件稳定性的新方法。该方法结合了预先计算的结构Z的复杂阻抗矩阵和加载电子束的束流隧道的TESLA计算导纳矩阵Y。因此,给定器件的增益矩阵G可以作为结构的z矩阵与光束隧道的导纳矩阵Y的乘积。随后对增益矩阵G的特征值进行分析,采用奈奎斯特方法确定器件的稳定性。我们讨论了新算法的细节,并使用可用的示例说明其应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling Stability of Vacuum Electronic Devices With the Large-Signal Code TESLA-Z
We present a new approach to the study of the stability of Vacuum Electronic devices using the large-signal code TESLA-Z. The approach combines a precomputed complex impedance matrix for the structure Z with a TESLA computed admittance matrix Y of the beam-tunnel loaded with an electron beam. The gain matrix G for a given device then can be found as the product of the Z-matrix of the structure and admittance matrix Y of the beam-tunnel. Subsequent analysis of the eigenvalues of the gain-matrix G uses the Nyquist method to determine the stability of the device. We discuss details of the new algorithms and illustrate its application using available examples.
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