130纳米SiGe BiCMOS中具有高基频和谐波抑制的高增益K/ ka波段三倍频器

Yu Zhu, N. Joram, F. Ellinger
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摘要

本文研究了一种用于K/ ka波段信号产生的高增益、高基频抑制和高谐波抑制的三倍频器。为了验证这一概念,该电路采用130纳米SiGe-BiCMOS技术实现。它基于级联码a级差分放大器,采用输出带通滤波器实现对基波和谐波的高抑制。在输入端,有源平衡器将单端输入信号转换为差分信号,并驱动三倍频器进入非线性区域。为了提高转换增益(CG),所提出的三倍频器之后是一个缓冲级和一个图腾柱(TP)输出级。它在26.7 GHz时提供- 3dbm的峰值输出功率,3db的输出频率范围在24 GHz到34.5 GHz之间,在- 33 dBm的输入功率水平下实现27.2 dB的峰值CG。与三次谐波相比,基频被抑制最多32 dB,而二次谐波被减少最多45 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High-Gain K/Ka-Band Frequency Tripler with High Fundamental and Harmonics Rejection in 130-nm SiGe BiCMOS
In this paper, we study a high gain frequency tripler with high fundamental and harmonics rejection designed for K/Ka-band signal generation. To prove the concept, the circuit is implemented in a 130-nm SiGe-BiCMOS technology. It is based on a cascode class-A differential amplifier adopting an output bandpass filter to achieve high suppressions of fundamental and harmonics. At the input, an active balun converts the single-ended input signal to a differential signal and drives the frequency tripler into the non-linear region. To improve the conversion gain (CG), the proposed frequency tripler is followed by a buffer stage and a totem pole (TP) output stage. It offers a peak output power of −3 dBm at 26.7 GHz with a 3-dB output frequency range between 24 GHz to 34.5 GHz, and achieves a peak CG of 27.2 dB at an input power level of −33 dBm. Compared to the third harmonic, the fundamental frequency is suppressed by up to 32 dB while the second harmonic is reduced by a maximum of 45 dB.
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