你们的校准有多好?验尸和重新校准

J. Aguilera, B. Fisher
{"title":"你们的校准有多好?验尸和重新校准","authors":"J. Aguilera, B. Fisher","doi":"10.1109/IMTC.1990.65995","DOIUrl":null,"url":null,"abstract":"Summary form only given. It is pointed out that the standard network analyzer calibration procedure suffers from several drawbacks. The test patterns, for instance, often reside on a wafer different from that being tested. The normal procedure is to measure only a single set of calibration patterns instead of collecting a statistically significant sample spanning the wafer. Wafer thickness uniformity, for example, affects the coplanar to microstrip launch discontinuity, which impacts the quality of the calibration. The parasitic probe-to-probe capacitances also differ between the calibration and test setups. Rather than propose solutions to these and other calibration issues, the authors examine the statistical quality of measurements after calibration and test. Reciprocity and symmetry are examined for several hundred passive components from a special test wafer. The frequency-dependent deviations from perfect reciprocity and symmetry are used to evaluate the quality of the original calibration. It is shown how this information can be used to recenter the calibration and quantify the intrinsic frequency degradation.<<ETX>>","PeriodicalId":404761,"journal":{"name":"7th IEEE Conference on Instrumentation and Measurement Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"How good is your calibration? A post-mortem examination and recalibration\",\"authors\":\"J. Aguilera, B. Fisher\",\"doi\":\"10.1109/IMTC.1990.65995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. It is pointed out that the standard network analyzer calibration procedure suffers from several drawbacks. The test patterns, for instance, often reside on a wafer different from that being tested. The normal procedure is to measure only a single set of calibration patterns instead of collecting a statistically significant sample spanning the wafer. Wafer thickness uniformity, for example, affects the coplanar to microstrip launch discontinuity, which impacts the quality of the calibration. The parasitic probe-to-probe capacitances also differ between the calibration and test setups. Rather than propose solutions to these and other calibration issues, the authors examine the statistical quality of measurements after calibration and test. Reciprocity and symmetry are examined for several hundred passive components from a special test wafer. The frequency-dependent deviations from perfect reciprocity and symmetry are used to evaluate the quality of the original calibration. It is shown how this information can be used to recenter the calibration and quantify the intrinsic frequency degradation.<<ETX>>\",\"PeriodicalId\":404761,\"journal\":{\"name\":\"7th IEEE Conference on Instrumentation and Measurement Technology\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-02-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th IEEE Conference on Instrumentation and Measurement Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.1990.65995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th IEEE Conference on Instrumentation and Measurement Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1990.65995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

只提供摘要形式。指出标准的网络分析仪校准程序存在一些缺陷。例如,测试图案通常位于与被测试晶圆不同的晶圆上。正常的程序是只测量一组校准模式,而不是在晶圆片上收集具有统计意义的样本。例如,晶圆厚度均匀性会影响共面到微带的发射不连续,从而影响校准质量。在校准和测试设置之间,寄生探针到探针的电容也不同。而不是提出这些和其他校准问题的解决方案,作者检查校准和测试后测量的统计质量。在专用测试晶片上对数百个无源元件进行了互易性和对称性测试。利用完全互易性和对称性的频率相关偏差来评价原始校准的质量。它显示了如何使用这些信息来重新校准和量化固有频率退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
How good is your calibration? A post-mortem examination and recalibration
Summary form only given. It is pointed out that the standard network analyzer calibration procedure suffers from several drawbacks. The test patterns, for instance, often reside on a wafer different from that being tested. The normal procedure is to measure only a single set of calibration patterns instead of collecting a statistically significant sample spanning the wafer. Wafer thickness uniformity, for example, affects the coplanar to microstrip launch discontinuity, which impacts the quality of the calibration. The parasitic probe-to-probe capacitances also differ between the calibration and test setups. Rather than propose solutions to these and other calibration issues, the authors examine the statistical quality of measurements after calibration and test. Reciprocity and symmetry are examined for several hundred passive components from a special test wafer. The frequency-dependent deviations from perfect reciprocity and symmetry are used to evaluate the quality of the original calibration. It is shown how this information can be used to recenter the calibration and quantify the intrinsic frequency degradation.<>
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