Seung Hun Kim, T. Jang, D. Kang, Jae Kwang Kwon, C. Park
{"title":"用于片对片通信的40nm CMOS宽带120ghz上转换混频器","authors":"Seung Hun Kim, T. Jang, D. Kang, Jae Kwang Kwon, C. Park","doi":"10.1109/RWS45077.2020.9050045","DOIUrl":null,"url":null,"abstract":"A wideband 120-GHz up-conversion mixer for high-speed chip to chip data communication is presented in a 40 nm CMOS process. Using a negative feedback resistor and PMOS transistor at transconductance stage of mixer, the conversion gain and bandwidth are both enhanced. According to the measurement results, the proposed mixer achieves a maximum conversion gain of −3.5 dB and a 3-dB bandwidth of 26-GHz at low local oscillator (LO) drive power of -4-dBm. The power consumption is only 8-mW at 0.9-V supply voltage.","PeriodicalId":184822,"journal":{"name":"2020 IEEE Radio and Wireless Symposium (RWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Wideband 120 GHz Up-Conversion Mixer in 40 nm CMOS for Chip to Chip Communication\",\"authors\":\"Seung Hun Kim, T. Jang, D. Kang, Jae Kwang Kwon, C. Park\",\"doi\":\"10.1109/RWS45077.2020.9050045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband 120-GHz up-conversion mixer for high-speed chip to chip data communication is presented in a 40 nm CMOS process. Using a negative feedback resistor and PMOS transistor at transconductance stage of mixer, the conversion gain and bandwidth are both enhanced. According to the measurement results, the proposed mixer achieves a maximum conversion gain of −3.5 dB and a 3-dB bandwidth of 26-GHz at low local oscillator (LO) drive power of -4-dBm. The power consumption is only 8-mW at 0.9-V supply voltage.\",\"PeriodicalId\":184822,\"journal\":{\"name\":\"2020 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS45077.2020.9050045\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS45077.2020.9050045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Wideband 120 GHz Up-Conversion Mixer in 40 nm CMOS for Chip to Chip Communication
A wideband 120-GHz up-conversion mixer for high-speed chip to chip data communication is presented in a 40 nm CMOS process. Using a negative feedback resistor and PMOS transistor at transconductance stage of mixer, the conversion gain and bandwidth are both enhanced. According to the measurement results, the proposed mixer achieves a maximum conversion gain of −3.5 dB and a 3-dB bandwidth of 26-GHz at low local oscillator (LO) drive power of -4-dBm. The power consumption is only 8-mW at 0.9-V supply voltage.