基于双控栅-浮栅晶体管(DCG-FGT)的新型可调施密特触发器

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2012-09-05 DOI:10.1109/MWSCAS.2012.6292102

A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour

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引用次数: 7

摘要

本文提出了一种采用DCG-FGT晶体管的低压可调CMOS施密特触发器。本文介绍了一种简单的电路，为迟滞阈值的编程提供了灵活性。在较大的电压范围内，可以精确地控制磁滞。所提出的施密特触发器采用90nm 1.2V CMOS技术设计，并使用Eldo对PSP器件模型进行了仿真。仿真结果表明，该系统轨对轨运行，开关电压VTH-(低开关电压)和VTH+(高开关电压)可独立调节。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT)

This paper presents a low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuit is introduced to provide flexibility to program the hysteretic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger has been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages VTH- (low switching voltage) and VTH+(high switching voltage).

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来源期刊

2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)

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