{"title":"功率集成电路中二极管的反向恢复安全工作区域","authors":"P. Hower, Ç. Kaya, S. Pendharkar, C. Jones","doi":"10.1109/ISPSD.2012.6229024","DOIUrl":null,"url":null,"abstract":"Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reverse-recovery safe operating area of diodes in power integrated circuits\",\"authors\":\"P. Hower, Ç. Kaya, S. Pendharkar, C. Jones\",\"doi\":\"10.1109/ISPSD.2012.6229024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reverse-recovery safe operating area of diodes in power integrated circuits
Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.
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