Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group

In this work, critical values of pore-formation in electrochemical machining of semiconductors of A3B5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.