薄型四平面封装(tqfp)的可塑性改进

S. Downey, D. Hagen, M. Lim, R. Ibrahim, K. Anuar, U. Malik
{"title":"薄型四平面封装(tqfp)的可塑性改进","authors":"S. Downey, D. Hagen, M. Lim, R. Ibrahim, K. Anuar, U. Malik","doi":"10.1109/IEMT.1996.559741","DOIUrl":null,"url":null,"abstract":"Experience has shown that in thin packages (20/spl times/20/spl times/1.4 mm), molding defects occur somewhat more frequently with large devices (12.7/spl times/12.7 mm), and devices molded in the die-down configuration. For these unique conditions, the mold compound flow front advanced slowly over the top surface of the die and rapidly over the back of the die exposed by the X-flag leadframe design. The most frequent defect observed in evaluations of die-up and die-down molding was exposed silicon after molding, caused by the uneven mold compound flow. To develop a robust molding process window, designed experiments were used to evaluate leadframe downset, mold gate design, molding compound, and molding parameters. Results showed that the leadframe downset was the most significant variable to improve moldability, and a deeper downset produced the best results. The molding process was optimized with two molding compounds, and the manufacturing process window is robust over a large variety of device sizes in both die-up and die-down molding configurations. All 112 lead and 144 lead packages from this line are qualified at JEDEC Level 1 for moisture sensitivity.","PeriodicalId":177653,"journal":{"name":"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Moldability improvements in thin quad flat packages (TQFPs)\",\"authors\":\"S. Downey, D. Hagen, M. Lim, R. Ibrahim, K. Anuar, U. Malik\",\"doi\":\"10.1109/IEMT.1996.559741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experience has shown that in thin packages (20/spl times/20/spl times/1.4 mm), molding defects occur somewhat more frequently with large devices (12.7/spl times/12.7 mm), and devices molded in the die-down configuration. For these unique conditions, the mold compound flow front advanced slowly over the top surface of the die and rapidly over the back of the die exposed by the X-flag leadframe design. The most frequent defect observed in evaluations of die-up and die-down molding was exposed silicon after molding, caused by the uneven mold compound flow. To develop a robust molding process window, designed experiments were used to evaluate leadframe downset, mold gate design, molding compound, and molding parameters. Results showed that the leadframe downset was the most significant variable to improve moldability, and a deeper downset produced the best results. The molding process was optimized with two molding compounds, and the manufacturing process window is robust over a large variety of device sizes in both die-up and die-down molding configurations. All 112 lead and 144 lead packages from this line are qualified at JEDEC Level 1 for moisture sensitivity.\",\"PeriodicalId\":177653,\"journal\":{\"name\":\"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.1996.559741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1996.559741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

经验表明,在薄封装(20/spl倍/20/spl倍/1.4 mm)中,大型器件(12.7/spl倍/12.7 mm)和在压模配置中成型的器件的成型缺陷更频繁地发生。对于这些独特的条件,模具复合流前沿在模具的上表面缓慢前进,并在X-flag引线框架设计暴露的模具背面迅速前进。在上模和下模成型评估中最常见的缺陷是成型后硅外露,这是由于模具复合流动不均匀造成的。为了开发一个强大的成型工艺窗口,设计了实验来评估引线框架下置、模口设计、成型化合物和成型参数。结果表明,引线框架下置是提高可塑性的最显著变量,下置越深效果越好。用两种成型化合物优化了成型工艺,并且在模上模下模配置中,制造工艺窗口在各种器件尺寸上都是稳健的。该生产线的所有112铅和144铅封装都符合JEDEC 1级的湿度敏感性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Moldability improvements in thin quad flat packages (TQFPs)
Experience has shown that in thin packages (20/spl times/20/spl times/1.4 mm), molding defects occur somewhat more frequently with large devices (12.7/spl times/12.7 mm), and devices molded in the die-down configuration. For these unique conditions, the mold compound flow front advanced slowly over the top surface of the die and rapidly over the back of the die exposed by the X-flag leadframe design. The most frequent defect observed in evaluations of die-up and die-down molding was exposed silicon after molding, caused by the uneven mold compound flow. To develop a robust molding process window, designed experiments were used to evaluate leadframe downset, mold gate design, molding compound, and molding parameters. Results showed that the leadframe downset was the most significant variable to improve moldability, and a deeper downset produced the best results. The molding process was optimized with two molding compounds, and the manufacturing process window is robust over a large variety of device sizes in both die-up and die-down molding configurations. All 112 lead and 144 lead packages from this line are qualified at JEDEC Level 1 for moisture sensitivity.
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