一个过程和温度补偿环形振荡器

Y. Shyu, Jiin-Chuan Wu
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引用次数: 40

摘要

介绍了一种采用数字0.6 /spl mu/m CMOS技术的频率变化小的片上振荡器。振荡器利用偏置技术来补偿温度和工艺变化对振荡频率的影响。振荡器不需要外部元件。仿真结果表明,所提出的振荡器在所有工艺角的频率峰值变化为/spl + /6.8%,温度范围为120/spl℃。振荡器被测量在680 kHz的中心频率下工作,在两个不同批次的29个样品芯片上具有/spl plusmn/4.7%的峰值变化,温度范围为35/spl°C至115/spl°C。作为比较,在同一芯片上制作了传统的逆变链式振荡器。常规变频器链的频率变化量为/spl + /14.6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A process and temperature compensated ring oscillator
An on-chip oscillator with small frequency variation in a digital 0.6 /spl mu/m CMOS technology is described. The oscillator utilizes a bias technique to compensate for the influences on the oscillation frequency caused by both temperature and process variations. No external components are needed in the oscillator. Simulation results show that the frequency of the proposed oscillator has a peak variation of /spl plusmn/6.8% for all process corners and a temperature range of 120/spl deg/C. The oscillator is measured to operate at a center frequency of 680 kHz and have a peak variation of /spl plusmn/4.7% over 29 sample chips in two different lots and a temperature range of 35/spl deg/C to 115/spl deg/C. As a comparison, a conventional inverter chain oscillator is made on the same chip. The frequency variation of the conventional inverter chain is /spl plusmn/14.6%.
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