K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"基于小信号谐波模型的239-315 GHz CMOS倍频器设计","authors":"K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.23919/EUMIC.2018.8539957","DOIUrl":null,"url":null,"abstract":"In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 239-315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model\",\"authors\":\"K. Takano, R. Dong, Sangyeop Lee, S. Amakawa, T. Yoshida, M. Fujishima\",\"doi\":\"10.23919/EUMIC.2018.8539957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 239-315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model
In order to realize a wideband frequency multiplier at terahertz frequencies, iterative optimization of circuit parameters is necessary. However, iterative execution of nonlinear simulation takes a prohibitively long time. We present a small-signal harmonic model, which is equivalent to using only the dominant components of a full set of X-parameters, to solve the problem. It is a simple but accurate nonlinear model suitable for obtaining the frequency response. A 300-GHz frequency doubler with an eight-stage driver amplifier is designed by using the technique. The frequency doubler is fabricated using a 40-nm CMOS process. It achieves a 3-dB bandwidth of 76 GHz from 239 to 315 GHz and a maximum output power of −10 dBm.