Shuye Zhang, Jianhao Xu, Shang Zhang, P. He, Mingjia Sun, Jianqun Yang, Xingji Li, K. Paik
{"title":"热循环冲击耦合多物理场载荷下三维CSP MEMS和IC的可靠性分析","authors":"Shuye Zhang, Jianhao Xu, Shang Zhang, P. He, Mingjia Sun, Jianqun Yang, Xingji Li, K. Paik","doi":"10.1109/ECTC32696.2021.00221","DOIUrl":null,"url":null,"abstract":"In this paper, reliability analysis of 3D CSP MEMS and IC under thermal cycle-impact coupled multi-physics loads was investigated. COMSOL Multiphysics, a finite element software, was used to analyze the mechanical behavior of our device under a −55°C/125°C thermal cycling and 1500G@1ms with half-sine pulse impact coupled load. MEMS chip was bonded on a silicon interposer by solder balls. An application specific integrated circuit (ASIC) for the signal processing was placed on the interposer beneath the MEMS. Combining the effects of thermal stress and impact loads, we hope to find out the failure modes of interconnect structures including solder joints and whole device. The deformation and stress distribution of the overall device will be carried out for layout optimization of interconnect structures.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability analysis of 3D CSP MEMS and IC under thermal cycle-impact coupled multi-physics loads\",\"authors\":\"Shuye Zhang, Jianhao Xu, Shang Zhang, P. He, Mingjia Sun, Jianqun Yang, Xingji Li, K. Paik\",\"doi\":\"10.1109/ECTC32696.2021.00221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, reliability analysis of 3D CSP MEMS and IC under thermal cycle-impact coupled multi-physics loads was investigated. COMSOL Multiphysics, a finite element software, was used to analyze the mechanical behavior of our device under a −55°C/125°C thermal cycling and 1500G@1ms with half-sine pulse impact coupled load. MEMS chip was bonded on a silicon interposer by solder balls. An application specific integrated circuit (ASIC) for the signal processing was placed on the interposer beneath the MEMS. Combining the effects of thermal stress and impact loads, we hope to find out the failure modes of interconnect structures including solder joints and whole device. The deformation and stress distribution of the overall device will be carried out for layout optimization of interconnect structures.\",\"PeriodicalId\":351817,\"journal\":{\"name\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32696.2021.00221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability analysis of 3D CSP MEMS and IC under thermal cycle-impact coupled multi-physics loads
In this paper, reliability analysis of 3D CSP MEMS and IC under thermal cycle-impact coupled multi-physics loads was investigated. COMSOL Multiphysics, a finite element software, was used to analyze the mechanical behavior of our device under a −55°C/125°C thermal cycling and 1500G@1ms with half-sine pulse impact coupled load. MEMS chip was bonded on a silicon interposer by solder balls. An application specific integrated circuit (ASIC) for the signal processing was placed on the interposer beneath the MEMS. Combining the effects of thermal stress and impact loads, we hope to find out the failure modes of interconnect structures including solder joints and whole device. The deformation and stress distribution of the overall device will be carried out for layout optimization of interconnect structures.