高开关频率SiC逆变电机电磁干扰和过电压现象建模与分析

2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) Pub Date : 2018-08-01 DOI:10.1109/EPEPEMC.2018.8521882

D. Tran, Gilles Segond, Victor Dossantos

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引用次数: 7

摘要

本文通过对15kVA/540V SiC逆变器的功率效率和损耗的分析，以及对高开关频率下换向的电磁干扰和过调量的分析，说明了采用碳化硅(SiC)宽禁带半导体的优点。逆变器的实测功率效率可达99%以上。该逆变器还实现在机电链驱动航空电机(型永磁同步电动机)。然而，SiC逆变器的快速开关(更高的di/dt和dv/dt)，在更高的频率下，需要识别电磁冲击(EMI)和超调开关电压。实验结果将显示该技术的有趣之处以及在高开关频率下的影响。

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Modeling and Analysis of EMI and Overvoltage Phenomenon in SiC Inverter Driven Motor at High Switching Frequency

This paper explains the advantages of using Wide Bandgap (WBG) semiconductor made of Silicon Carbide (SiC) by the characterization of power efficiency and losses of SiC inverter of 15kVA/540V and the analysis of EMI and overshoot of commutation at high switching frequency. The measured power efficiency of inverter can be higher 99%. This inverter also implemented in to electromechanical chain to drive an aeronautic motor (type PMSM). However, faster switching (higher di/dt and dv/dt) of SiC inverter, at higher frequencies, it is necessary to identify the electromagnetic impact (EMI) and the overshoot switching voltage. The experimental results will be shown the interesting of this technology and the impact at high switching frequency.

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2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC)

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