单级、高效率、26瓦功率放大器，采用SiC LE-MESFET

2006 Asia-Pacific Microwave Conference Pub Date : 2006-12-01 DOI:10.1109/APMC.2006.4429458

S. Azam, R. Jonsson, Q. Wahab

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引用次数: 8

摘要

本文介绍了一种单级26w负反馈功率放大器，使用6 mm门宽的SiC横向外延MESFET，覆盖200-500 MHz的频率范围。在50 V漏极偏置下，整个频段的典型结果是，功率增益约为22 dB，输出功率约为43 dBm, P1 dB的最小功率增加效率在200 MHz时为47%，在500 MHz时为60%，10 dB时的IMD3电平从P1 dB返回低于-45 dBc。结果表明，在500 MHz、60 V漏极偏置时，功率增益为24.9 dB，输出功率为44.15 dBm (26 W)， PAE为66%。

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Single-stage, high efficiency, 26-watt power amplifier using SiC LE-MESFET

This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.

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2006 Asia-Pacific Microwave Conference

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