{"title":"0.8 μm GaAs介面共面ka波段平衡共门放大器","authors":"P. Shearing, A. Freundorfer, Y. Antar","doi":"10.1109/ANTEM.1998.7861771","DOIUrl":null,"url":null,"abstract":"A balanced amplifier utilizing 0.8 μm MESFET common-gate (CG) transistors was demonstrated to provide 6 dB of gain at 30 GHz and a 3 dB bandwidth of 3.5 GHz. The power at 1 dB gain compression was 9.67 dBm for the amplifier. The amplifier also demonstrated unconditional stability over the full frequency range. To our knowledge, this is the highest frequency amplifier with gain ever demonstrated with a process of this kind.","PeriodicalId":334204,"journal":{"name":"1998 Symposium on Antenna Technology and Applied Electromagnetics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A coplanar Ka-band balanced common-gate amplifier in 0.8 μm GaAs mesfet\",\"authors\":\"P. Shearing, A. Freundorfer, Y. Antar\",\"doi\":\"10.1109/ANTEM.1998.7861771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A balanced amplifier utilizing 0.8 μm MESFET common-gate (CG) transistors was demonstrated to provide 6 dB of gain at 30 GHz and a 3 dB bandwidth of 3.5 GHz. The power at 1 dB gain compression was 9.67 dBm for the amplifier. The amplifier also demonstrated unconditional stability over the full frequency range. To our knowledge, this is the highest frequency amplifier with gain ever demonstrated with a process of this kind.\",\"PeriodicalId\":334204,\"journal\":{\"name\":\"1998 Symposium on Antenna Technology and Applied Electromagnetics\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Symposium on Antenna Technology and Applied Electromagnetics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ANTEM.1998.7861771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Symposium on Antenna Technology and Applied Electromagnetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.1998.7861771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A coplanar Ka-band balanced common-gate amplifier in 0.8 μm GaAs mesfet
A balanced amplifier utilizing 0.8 μm MESFET common-gate (CG) transistors was demonstrated to provide 6 dB of gain at 30 GHz and a 3 dB bandwidth of 3.5 GHz. The power at 1 dB gain compression was 9.67 dBm for the amplifier. The amplifier also demonstrated unconditional stability over the full frequency range. To our knowledge, this is the highest frequency amplifier with gain ever demonstrated with a process of this kind.
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