{"title":"1.2 V 3.1-10.6 GHz CMOS低噪声放大器，增益24 dB，噪声系数2.4 dB","authors":"Sun Limei","doi":"10.1109/WCSP.2009.5371445","DOIUrl":null,"url":null,"abstract":"This paper presents a 3.1–10.6 GHz low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed wideband amplifier comprises a single-ended resistor feedback LNA with wideband input matching and a single-to-differential voltage buffer which improves the power gain of the amplifier. The LNA achieves a 23.2 dB voltage gain and input return loss below −13 dB from 3.1–10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and −11.9 dBm IIP3 at 6 GHz. The proposed LNA is realized in 0.13 μm CMOS technology and occupies 0.32 mm2 area. The power consumption is 12.2 mW with 1.2 V supply.","PeriodicalId":244652,"journal":{"name":"2009 International Conference on Wireless Communications & Signal Processing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 1.2 V 3.1–10.6 GHz CMOS low noise amplifier with 24 dB gain and 2.4 dB noise figure\",\"authors\":\"Sun Limei\",\"doi\":\"10.1109/WCSP.2009.5371445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 3.1–10.6 GHz low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed wideband amplifier comprises a single-ended resistor feedback LNA with wideband input matching and a single-to-differential voltage buffer which improves the power gain of the amplifier. The LNA achieves a 23.2 dB voltage gain and input return loss below −13 dB from 3.1–10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and −11.9 dBm IIP3 at 6 GHz. The proposed LNA is realized in 0.13 μm CMOS technology and occupies 0.32 mm2 area. The power consumption is 12.2 mW with 1.2 V supply.\",\"PeriodicalId\":244652,\"journal\":{\"name\":\"2009 International Conference on Wireless Communications & Signal Processing\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Wireless Communications & Signal Processing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCSP.2009.5371445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Wireless Communications & Signal Processing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCSP.2009.5371445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2 V 3.1–10.6 GHz CMOS low noise amplifier with 24 dB gain and 2.4 dB noise figure
This paper presents a 3.1–10.6 GHz low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed wideband amplifier comprises a single-ended resistor feedback LNA with wideband input matching and a single-to-differential voltage buffer which improves the power gain of the amplifier. The LNA achieves a 23.2 dB voltage gain and input return loss below −13 dB from 3.1–10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and −11.9 dBm IIP3 at 6 GHz. The proposed LNA is realized in 0.13 μm CMOS technology and occupies 0.32 mm2 area. The power consumption is 12.2 mW with 1.2 V supply.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
